发明名称 PLASMA DAMAGE MEASUREMENT APPARATUS
摘要 <p>PURPOSE: A plasma damage measuring device is provided to use a pattern for inducing plasma charging and a measurement pattern, thereby reducing the costs for manufacturing a test wafer. CONSTITUTION: A test wafer(100) comprises a device isolation pattern(210). The device isolation pattern electrically isolates plasma damage measuring devices which are different from at least one plasma damage measuring device(200). Charges induced from plasma are accumulated in an antenna structure. A semiconductor device is connected to the lower part of the antenna structure. The electrical features of the semiconductor device are varied by the accumulated charges.</p>
申请公布号 KR20110133115(A) 申请公布日期 2011.12.12
申请号 KR20100052670 申请日期 2010.06.04
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 WOO, JONG CHANG;KIM, GWAN HA
分类号 H01L21/66;H01L27/115 主分类号 H01L21/66
代理机构 代理人
主权项
地址