| 摘要 |
PURPOSE: An ITO sputtering target and a method of manufacturing the same are provided to prevent an ITO sputtering target from cracking even if bonding is done to a copper backing plate. CONSTITUTION: An ITO sputtering target is as follows. The content of Sn is below 5 mass% in SnO2 conversion. Residual stress is -650~-200MPa. The ITO sputtering target is coupled to a backing plate, which is formed from a metallic material with a thermal expansion coefficient of below 2.386×10^-5/°C. The manufacturing method of the ITO sputtering target is as follows. Powder for manufacturing the ITO sputtering target is sintered at a temperature of 1450~1700°C in a furnace. The temperature in the furnace falls to a temperature of 700~900°C at a speed of over 300°C/h. The temperature falls at a speed of 10~100°C/h and ITO sintered compound obtained is cooled.
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