| 摘要 |
PURPOSE: A semiconductor device with a buried bit line and a manufacturing method thereof are provided to simultaneously expose and bond parts of sidewalls of active areas, thereby making a bonding depth uniform. CONSTITUTION: An active area(21B) is separated by a trench. A separation film(37A) separates the inside of the trench. The separation film is placed between buried bit lines(BBL1~BBL4). The buried bit lines are buried in the trench. Junctions(34A,34B) are formed on both sidewalls of the trench. A sidewall contact is formed between the junctions and the buried bit line.
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