| 摘要 |
The invention relates to materials science and can be used in radio-electronic semi-conductor and optoelectronic machine-building. A method for producing of epitaxial layers in which the substrate and target are heating, target material is evaporated, vapour is transported and condensed on substrate in vacuum chamber, substrate and target are preliminarily prepared and located on the distance of 50± in vacuum chamber at pressure of 10-10Pa, then substrate is heated to temperature 180-250 ºC by outside heater and target is heated by pulse laser radiation in range of free-running lasing of pulses at wave length λ=1.06 µm, pulse-repetition frequencies of 12.5 Hz, sanitation rate of laser beam of 12.5-13 mm/s, energy of laser pulses of 12.5 J, diameter of laser focus of and material is deposited during 120-1800 s, at that complex binary or triplex compounds with incongruent type of evaporation are used as a target, green chip KBr or KCl, or CdTe monocrystal plate is used as a substrate. The use of the invention allows to produce structure-complete epitaxial layers at method simplification. |
