NONVOLATILE MEMORY DEVICE, PROGRAMMING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A nonvolatile memory device, a programming method thereof, and a memory system including the same are provided to reduce a leakage due to difference between a channel voltage and a bit line voltage by applying a positive voltage to a selection bit line in a program operation. CONSTITUTION: A first positive voltage is applied to a selection bit line(S110). A second positive voltage is applied to an unselected bit line(S120). A third positive voltage is applied to the selected string selection line. A fourth positive voltage is applied to the unselected string selection line. A program operation voltage is applied to word lines(S130).