THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A 3D semiconductor memory device and a manufacturing method thereof are provided to improve the working speed of a 3D nand flash memory device by forming a common source line using a metal material having resistivity. CONSTITUTION: A gate structure(170) is arranged on a substrate(100). The gate structure comprises a plurality of gate electrodes(171-178) which is laminated. Conductive lines are formed between the gate structure and the substrate. A horizontal semiconductor pattern is formed between the gate structure and the conductive line. The conductive line is directly connected to the bottom surface of the horizontal semiconductor pattern. The conductive line is parallel to the gate electrodes. A vertical semiconductor pattern is connected to the horizontal semiconductor pattern by passing through the gate structure.