发明名称 SEMICONDUCTOR MEMORY DEVICE AND SYSTEM HAVING STACKED SEMICONDUCTOR LAYER
摘要 <p>PURPOSE: A semiconductor memory device and system is provided to improve working speed of the system by storing store bulk digital media data in the same memory as system data and to reduce manufacturing costs. CONSTITUTION: Semiconductor layers have a same memory cell structure. A first memory domain(1100) comprises a semiconductor layer for storing system data. A second memory domain(1200) comprises the other semiconductor layer for storing data except for the system data. The system data comprises one or more data which are selected from a data group. The data group comprises a booting code, a system code, and application software. Each semiconductor layer of the first memory domain is a semiconductor layer in which a defect bit does not generated.</p>
申请公布号 KR20110132820(A) 申请公布日期 2011.12.09
申请号 KR20100052369 申请日期 2010.06.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SANG BO;KYUNG, KYE HYUN
分类号 H01L21/8239;G11C8/12 主分类号 H01L21/8239
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