METHOD FOR CRYSTALLIZATION OF SILICON LAYER AND METHOD FOR FORMATION OF THIN FILM TRANSISTOR USING THE SAME
摘要
PURPOSE: A method for crystallization of a silicon layer and a method for forming a thin film transistor using the method for crystallization are provided to steadily form catalyst metal of a trace amount by changing the surface of an amorphous silicon layer into hydrophobic. CONSTITUTION: An amorphous silicon layer is formed on substrate(S110). The surface of the amorphous silicon is executed a hydrophobic treatment. A catalyst metal is formed on the amorphous silicon layer(S130). The amorphous silicon layer which forms the catalyst metal is crystallized to a polycrystalline silicon layer by a thermal process(S140). The hydrophobic treatment is processed using solution which contains hydrogen or fluorine. A gate insulating layer is formed on the polycrystalline silicon layer and a gate electrode is formed on the gate insulating layer. A source/drain domain is formed in both sides of the gate electrode. An inter layer insulating layer is formed on the gate insulating layer and the gate electrode. A source/drain electrode touches with the source/drain domain by passing through the inter layer insulating layer.
申请公布号
KR20110132808(A)
申请公布日期
2011.12.09
申请号
KR20100052353
申请日期
2010.06.03
申请人
SAMSUNG MOBILE DISPLAY CO., LTD.
发明人
CHUNG, YUN MO;LEE, KI YONG;SEO, JIN WOOK;JEONG, MIN JAE;SON, YONG DUCK;SO, BYUNG SOO;PARK, SEUNG KYU;PARK, BYOUNG KEON;LEE, DONG HYUN;LEE, KIL WON;LEE, TAK YOUNG;PARK, JONG RYUK