发明名称 Write Buffer for Improved DRAM Write Access Patterns
摘要 The present invention relates to a method and respective system for operating a DRAM main memory. One buffer line is provided for multiple pages. When writing data to the buffer it is decided which to which buffer-line the data is written to based on its destination main memory address. A tuple consisting of lower memory address and data is stored. Data entered into the buffer-line will be sorted by page in case the line is flushed to the main memory. Sorting the buffer entries results in less page openings and closings, since the data is re-arranged by memory address and therefore in logical order. By using one line for multiple pages only a fraction of memory of a common set-associative cache is needed, thus decreasing the amount of overhead significantly.
申请公布号 US2011302367(A1) 申请公布日期 2011.12.08
申请号 US20100962774 申请日期 2010.12.08
申请人 BALKESEN CAGRI;BUEHLER MARKUS;DORSCH RAINER;HUTZL GUENTHER;KAUFMANN MICHAEL W.;PFEFFERKORN DANIEL;ROHR DAVID;SCHERZINGER STEFANIE;SCHWARZ THOMAS;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BALKESEN CAGRI;BUEHLER MARKUS;DORSCH RAINER;HUTZL GUENTHER;KAUFMANN MICHAEL W.;PFEFFERKORN DANIEL;ROHR DAVID;SCHERZINGER STEFANIE;SCHWARZ THOMAS
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
主权项
地址