| 摘要 |
An insulating film is formed on a semiconductor substrate. A metal sacrificial film is formed on the insulating film. Then, the sacrificial film is selectively etched to form a trench pattern in the sacrificial film. The insulating film is irradiated with ultraviolet light or an electron beam using the sacrificial film having the trench pattern as a mask. After that, an interconnect formation groove is formed in the insulating film using the sacrificial film having the trench pattern as a mask. A metal film is formed in the interconnect formation groove. |
