| 发明名称 |
OXIDE SINTERED BODY, TARGET COMPRISING THE SAME, AND OXIDE SEMICONDUCTOR THIN FILM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered body capable of suppressing abnormal discharge generated in forming an oxide semiconductor thin film using a sputtering method and obtaining an oxide semiconductor thin film with stability and good reproducibility. <P>SOLUTION: The oxide sintered body contains an oxide of indium and aluminum and has an atomic ratio of Al/(Al+In) of 0.01-0.08. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2011249570(A) |
申请公布日期 |
2011.12.08 |
| 申请号 |
JP20100121471 |
申请日期 |
2010.05.27 |
| 申请人 |
IDEMITSU KOSAN CO LTD |
发明人 |
EBATA KAZUAKI;TOMAI SHIGEKAZU;YANO KIMINORI;INOUE KAZUYOSHI |
| 分类号 |
H01L21/363;C04B35/00;C23C14/34;H01L21/20;H01L21/203;H01L21/336;H01L29/786 |
主分类号 |
H01L21/363 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
