发明名称 Yttrium contacts for germanium semiconductor radiation detectors
摘要 A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
申请公布号 US2011298131(A1) 申请公布日期 2011.12.08
申请号 US201113068811 申请日期 2011.05.20
申请人 HULL ETHAN;PEHL RICHARD;SUTTLE BRUCE;LATHROP JAMES 发明人 HULL ETHAN;PEHL RICHARD;SUTTLE BRUCE;LATHROP JAMES
分类号 H01L23/48 主分类号 H01L23/48
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