发明名称 |
Yttrium contacts for germanium semiconductor radiation detectors |
摘要 |
A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
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申请公布号 |
US2011298131(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113068811 |
申请日期 |
2011.05.20 |
申请人 |
HULL ETHAN;PEHL RICHARD;SUTTLE BRUCE;LATHROP JAMES |
发明人 |
HULL ETHAN;PEHL RICHARD;SUTTLE BRUCE;LATHROP JAMES |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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地址 |
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