| 摘要 |
Disclosed is a method for manufacturing a semiconductor device, wherein, in a step (S1), a plurality of SiC semiconductor chips are mounted on a mounting substrate, and in a step (S2), a voltage is applied to the SiC semiconductor chips on the mounting substrate. In a step (S3), in the state wherein the voltage is applied, a temperature distribution image of the mounting substrate surface is obtained using thermography and thermal image devices, such as an infrared microscope, and in a step (S5), whether there is a failure chip or not is determined by analyzing the image. In a step (S7), in the case (S5:YES) wherein the failure chip is contained in the mounting substrate, the failure chip is rejected by cutting the wiring of the failure chip. Consequently, the method for manufacturing a semiconductor chip using small-capacity chips is provided. |
