发明名称 |
METHOD AND SYSTEM FOR PATTERNING A SUBSTRATE |
摘要 |
A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch. |
申请公布号 |
US2011300711(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US20100859606 |
申请日期 |
2010.08.19 |
申请人 |
MARTIN PATRICK M.;CARLSON STEVEN;OH CHOONG-YOUNG;PARK JUNG-WOOK;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
MARTIN PATRICK M.;CARLSON STEVEN;OH CHOONG-YOUNG;PARK JUNG-WOOK |
分类号 |
H01L21/311;G21K5/00;H01L21/263 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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