发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer. |
申请公布号 |
US2011300652(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113211107 |
申请日期 |
2011.08.16 |
申请人 |
PARK SEONG EUN;OH BANG WON;PARK GIL HAN;KIM MIN HO;CHOI RAK JUN;PARK YOUNG MIN;PARK HEE SEOK;SAMSUNG LED CO., LTD. |
发明人 |
PARK SEONG EUN;OH BANG WON;PARK GIL HAN;KIM MIN HO;CHOI RAK JUN;PARK YOUNG MIN;PARK HEE SEOK |
分类号 |
H01L33/60;H01L33/00 |
主分类号 |
H01L33/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|