METHOD FOR MANUFACTURING BONDED WAFER

摘要

Disclosed is a method for manufacturing a bonded wafer, in which an ion injection layer is formed in a bond wafer, the surfaces of the bond wafer and a base wafer are bonded together, and planarizing treatment of a detachment surface is performed after the bond wafer is detached at the ion injection layer, wherein a silicon single-crystal wafer having a resistivity of 0.2 Ocm or less in the region where the ion injection layer is formed is employed as the bond wafer, the ion injection layer is formed in which the dosage of ions that form the ion injection layer is 4×1016/cm2 or less, and the planarizing treatment for the detachment surface is performed by means of heat treatment in an atmosphere containing HCl gas. As a result, in a method for manufacturing a bonded wafer that has a thin film of low resistivity containing a dopant such as boron in high concentration, by using the ion injection/detachment method, low resistivity can be maintained by suppressing loss of the dopant due to external diffusion and oxidation, etc.