发明名称 |
SEMICONDUCTOR MEMORY CHIP, SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE PACKAGE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a three-dimensional semiconductor device. <P>SOLUTION: A semiconductor memory chip comprises a data chip pad, a data input buffer coupled to the data chip pad, a latch coupled to the data input buffer and latching data output from the data input buffer, and a memory cell array. The data input buffer and the latch are a part of a first data writing path from the data chip pad to the memory cell array. The semiconductor memory chip further comprises a penetration electrode electrically coupled to an electric node of the first data writing path, and forming a second data writing path including a part of the first data writing path. The second data writing path is expanded from a chip terminal different from the data chip pad to the memory cell array. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011248992(A) |
申请公布日期 |
2011.12.08 |
申请号 |
JP20110117388 |
申请日期 |
2011.05.25 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JIANG YUCHENG;CHANG DONG-HYUN;JANG SEONG-JIN;YI HOON;KIM JIN-HO;KIM NAM-SEOK;MOON BYUNG SIK;YI U-DONG |
分类号 |
G11C5/00;H01L21/8242;H01L25/065;H01L25/07;H01L25/18;H01L27/10;H01L27/108 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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