发明名称 FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD THEREOF AND BIOSENSOR
摘要 <P>PROBLEM TO BE SOLVED: To improve a field effect transistor for reducing burden on manufacturing processes and differences in characteristics between devices, and to provide a manufacturing method of the transistor and a biosensor. <P>SOLUTION: When just a source electrode 3 and a drain electrode 4 are formed, a titanium oxide film 9 is naturally formed on the surfaces of the source electrode 3 and the drain electrode 4 as a coating. Conventionally, coating work on a source electrode 102 and a drain electrode 103 with an insulating epoxy resin 107 has been performed separately, but this process can be eliminated and manufacturing processes can be simplified; thus, burden on manufacturing processes is reduced. Also, since the titanium oxide film 9 coating the surfaces of the source electrode 3 and the drain electrode 4 is formed by natural oxidization in the ambient atmosphere, the film thickness of the titanium oxide film 9 is formed to be extremely thin and uniform. Consequently, the film thickness of the titanium oxide film 9 extending off a surface of a detection layer 7 is the same between different devices, thereby the surface areas of the detection layers 7 being uniform across different devices, and difference of characteristics between devices is reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011247795(A) 申请公布日期 2011.12.08
申请号 JP20100122399 申请日期 2010.05.28
申请人 WASEDA UNIV 发明人 KAWARADA HIROSHI;TAJIMA SHINYA
分类号 G01N27/414 主分类号 G01N27/414
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