发明名称 PHASE DEFECT CORRECTION METHOD OF REFLECTIVE MASK AND MANUFACTURING METHOD OF REFLECTIVE MASK
摘要 <P>PROBLEM TO BE SOLVED: To provide a phase defect correction method of a reflective mask and a manufacturing method of the reflective mask which can correct an absorber pattern accurately without damaging a reflective layer and leaving correction marks, and which can obtain a good transfer pattern without being affected by phase defects. <P>SOLUTION: A phase defect correction method of a reflective mask comprises steps of: providing a hard mask layer on an absorber layer of a reflective mask blank; forming an alignment mark for blank defects; performing surface defect inspection of the blank; recording a position of the surface defect as mask blank defect information; etching the hard mask layer to form a hard mask pattern; measuring the position and size of the surface defect by using AFM based on the defect information; selecting a hard mask pattern to be corrected and determining the correction position and correction amount; correcting the hard mask pattern by a defect correction device; and forming an absorber pattern with the corrected hard mask pattern as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011249512(A) 申请公布日期 2011.12.08
申请号 JP20100120402 申请日期 2010.05.26
申请人 DAINIPPON PRINTING CO LTD 发明人 ABE TSUKASA;TAKIGAWA TADAHIKO;INAZUKI YUICHI
分类号 H01L21/027;G03F1/22;G03F1/24;G03F1/72;G03F1/74;G03F1/84 主分类号 H01L21/027
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