发明名称 |
PHASE DEFECT CORRECTION METHOD OF REFLECTIVE MASK AND MANUFACTURING METHOD OF REFLECTIVE MASK |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase defect correction method of a reflective mask and a manufacturing method of the reflective mask which can correct an absorber pattern accurately without damaging a reflective layer and leaving correction marks, and which can obtain a good transfer pattern without being affected by phase defects. <P>SOLUTION: A phase defect correction method of a reflective mask comprises steps of: providing a hard mask layer on an absorber layer of a reflective mask blank; forming an alignment mark for blank defects; performing surface defect inspection of the blank; recording a position of the surface defect as mask blank defect information; etching the hard mask layer to form a hard mask pattern; measuring the position and size of the surface defect by using AFM based on the defect information; selecting a hard mask pattern to be corrected and determining the correction position and correction amount; correcting the hard mask pattern by a defect correction device; and forming an absorber pattern with the corrected hard mask pattern as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011249512(A) |
申请公布日期 |
2011.12.08 |
申请号 |
JP20100120402 |
申请日期 |
2010.05.26 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
ABE TSUKASA;TAKIGAWA TADAHIKO;INAZUKI YUICHI |
分类号 |
H01L21/027;G03F1/22;G03F1/24;G03F1/72;G03F1/74;G03F1/84 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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