发明名称 |
N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits |
摘要 |
A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.
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申请公布号 |
US2011297916(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113115453 |
申请日期 |
2011.05.25 |
申请人 |
BENNETT BRIAN R.;BOOS JOHN BRADLEY;ANCONA MARIO;CHAMPLAIN JAMES G.;PAPANICOLAOU NICOLAS A.;THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
BENNETT BRIAN R.;BOOS JOHN BRADLEY;ANCONA MARIO;CHAMPLAIN JAMES G.;PAPANICOLAOU NICOLAS A. |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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