发明名称 |
SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FOR FORMING SAME |
摘要 |
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
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申请公布号 |
US2011298007(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113211036 |
申请日期 |
2011.08.16 |
申请人 |
SRINIVASAN BHASKAR;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. |
发明人 |
SRINIVASAN BHASKAR;SANDHU GURTEJ S. |
分类号 |
H01L29/88;H01L21/3205 |
主分类号 |
H01L29/88 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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