发明名称 Method of manufacturing semiconductor light emitting device
摘要 Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
申请公布号 US2011300654(A1) 申请公布日期 2011.12.08
申请号 US201113137374 申请日期 2011.08.10
申请人 SUNG YOUN-JOON;CHAE SU-HEE;JANG TAE-HOON;KIM KYU-SANG 发明人 SUNG YOUN-JOON;CHAE SU-HEE;JANG TAE-HOON;KIM KYU-SANG
分类号 H01L33/36;H01L33/00;H01L33/22 主分类号 H01L33/36
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