发明名称 |
Method of manufacturing semiconductor light emitting device |
摘要 |
Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes. |
申请公布号 |
US2011300654(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113137374 |
申请日期 |
2011.08.10 |
申请人 |
SUNG YOUN-JOON;CHAE SU-HEE;JANG TAE-HOON;KIM KYU-SANG |
发明人 |
SUNG YOUN-JOON;CHAE SU-HEE;JANG TAE-HOON;KIM KYU-SANG |
分类号 |
H01L33/36;H01L33/00;H01L33/22 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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