METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

Disclosed is a technique for forming a dense metal film which has low resistivity and low concentrations of impurities that are derived from starting materials. Specifically disclosed is a method for manufacturing a semiconductor device, wherein a film less than one atomic layer is formed on the surface of a substrate by carrying out: a first step wherein a first starting material is supplied into a process chamber, in which the substrate is contained, and the surface of the substrate is caused to adsorb the first starting material; a second step wherein a reaction gas, which is different from the first starting material, is supplied into the process chamber before the adsorption of the first starting material on the substrate surface is saturated, and is caused to react with the first starting material adsorbed on the substrate; a third step wherein the atmosphere within the process chamber is removed; and a fourth step wherein a modifying gas for modifying the first starting material is supplied into the process chamber and the first starting material adsorbed on the substrate is modified.