| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device capable of operating at a high speed. <P>SOLUTION: A memory device includes a semiconductor memory and a controller for controlling the semiconductor memory. The controller includes a first command issue section, a second command issue section, an error correction part and a control section. The first command issue section issues a reading command into the semiconductor memory. The second command issue section independent from the first command issue section is configured so that a command for directing a process without reading of data from the semiconductor memory can be issued into the semiconductor memory. The error correction part corrects an error included in the data supplied from the semiconductor memory. The control section controls the error correction part, the first command issue section and the second command issue section. <P>COPYRIGHT: (C)2012,JPO&INPIT |
