| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency module capable of avoiding bias-jump at high temperature current-carrying time and commonalizing of a external power source regardless of products in actual operation, and reducing the number of terminals. <P>SOLUTION: The high frequency module 1 comprises: a semiconductor device 24; an input matching circuit 17; an output matching circuit 18; a gate bias circuit 70 for actual operation; a gate bias terminal 41a for actual operation connected to the gate bias circuit 70 for actual operation; a gate bias terminal 21a doubling as a high frequency input terminal, for high temperature operation and connected to the input matching circuit 17; a drain bias circuit 80 connected to the output matching circuit 18; a drain bias terminal 41b connected to the drain bias circuit 80; and a high frequency output terminal 21b connected to the output matching circuit 18; and is housed in one package. The method for operating the high frequency module is provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
