| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an insulating film with sufficient film quality. <P>SOLUTION: A film formation device 1 includes an ionization device 25. The ionization device 25 is arranged in the middle of a route of reaction gas. The reaction gas is ionized by the ionization device 25 in the middle of flowing in the route, and the ionized reaction gas is introduced into a film formation chamber 2. When a target 6 is sputtered while the ionized reaction gas is introduced into the film formation chamber 2, sputtering particles and the reaction gas react each other and a film of a reactant is formed on a surface of a substrate 11. When the reaction gas is ionized and sputtering is performed, film formation speed becomes faster and the film of more sufficient film quality can be obtained compared to a case when the reaction gas is not ionized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
