发明名称 |
SELF-ALIGNED CONTACT FOR TRENCH MOSFET |
摘要 |
The process methods and structures mentioned above for creating a trench MOSFET enables self-aligned contacts to be formed to allow decreasing pitch size for trench MOSFET. The self-aligned contacts are formed by etching exposed silicon areas without using lithographical mask and alignment. As a result, the allowance for alignment can be saved and the pitch size can be decreased.
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申请公布号 |
US2011298045(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US20100792025 |
申请日期 |
2010.06.02 |
申请人 |
KALNITSKY ALEX;TUAN HSIAO-CHIN;WU KUO-MING;HUANG WEI TSUNG |
发明人 |
KALNITSKY ALEX;TUAN HSIAO-CHIN;WU KUO-MING;HUANG WEI TSUNG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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