发明名称 Memory system and method of accessing a semiconductor memory device
摘要 A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.
申请公布号 US2011302476(A1) 申请公布日期 2011.12.08
申请号 US201113137425 申请日期 2011.08.15
申请人 LEE JAESOO;ROH KANGHO;CHO WONHEE;SHIM HOJUN;CHOI YOUNGJOON;HEO JAEHOON;SONG JE-HYUCK;CHO SEUNG-DUK;KIM SEONTAEK;OH MOONWOOK;PARK JONG TAE;CHEON WONMOON;PARK CHANIK;LEE YANG-SUP;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JAESOO;ROH KANGHO;CHO WONHEE;SHIM HOJUN;CHOI YOUNGJOON;HEO JAEHOON;SONG JE-HYUCK;CHO SEUNG-DUK;KIM SEONTAEK;OH MOONWOOK;PARK JONG TAE;CHEON WONMOON;PARK CHANIK;LEE YANG-SUP
分类号 G06F12/00;G06F11/10;G06F13/28;H03M13/05 主分类号 G06F12/00
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