| 摘要 |
<p>Disclosed is a semiconductor element (ST) which comprises a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) that is provided with a channel portion (14bc) at a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source electrode (15bs) and the drain electrode (15bd) are arranged so as not to overlap with the gate electrode (12b) when viewed in plan. Non-overlapping portions of the region that is adjacent to both the gate electrode (12b) and the source electrode (15bs) and the region that is adjacent to both the gate electrode (12b) and the drain electrode (15bd) have been subjected to a resistance reducing treatment, said portions including the surface of the oxide semiconductor film (14b).</p> |
