| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent deterioration of process margin with keeping charge balance in a super junction structure. <P>SOLUTION: A semiconductor device having a current-flowing cell region A and a terminating region B surrounding the cell region A has an n<SP POS="POST">+</SP>drain layer (first semiconductor region) 11, n-type semiconductor pillars 31 and p-type semiconductor pillars 32 arranged alternately along an X-direction, a drain electrode (first main electrode) 1, a p-type base layer (second semiconductor region) 13, an n-type source layer (third semiconductor region) 14, a source electrode (second main electrode) 2 and a gate electrode (control electrode) 21. The semiconductor pillars 31 and 32 other than a semiconductor pillar 32E nearest to the terminating region B are provided in a stripe-shape along a Y-direction, and the semiconductor pillar 32E contains high-concentration areas 321 having a relatively high impurity concentration and low-concentration areas 322 having a relatively low impurity concentration which are alternately provided along the Y-direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
