发明名称 SEMICONDUCTOR MEMORY DEVICE BLOCK MERGING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device block merging method. <P>SOLUTION: In a semiconductor memory device block merging method, a plurality of data are programmed to at least more than one first block in a first program manner. Of the first block, more than one merging object blocks to which the merging is needed are selected. Of the first block or of at least more than one second blocks, merging performing blocks for performing the merging are selected. A plurality of merging object data positioned in a merging object block are programmed in a merging performing block in a second program manner. Therefore, the entire performance of the semiconductor memory device performing block merging can be enhanced. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011248873(A) 申请公布日期 2011.12.08
申请号 JP20110103615 申请日期 2011.05.06
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM MN-SOK;PARK KI TAE
分类号 G06F12/02;G06F12/00;G11C16/02 主分类号 G06F12/02
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