发明名称 |
METHOD FOR FABRICATING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To generate a plurality of crystal nuclei capable of forming a high-quality microcrystalline semiconductor film and to provide a method for fabricating a microcrystalline semiconductor film in which the plurality of crystal nuclei are grown. <P>SOLUTION: In fabricating a microcrystalline semiconductor film, a first step in which plasma is generated by continuous discharge to generate a plurality of crystal nuclei and a second step in which plasma is generated by pulse discharge to fill the gap between the plurality of crystal nuclei are performed. The second step is performed after the first step. The first step and the second step may be repeated several times. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011249783(A) |
申请公布日期 |
2011.12.08 |
申请号 |
JP20110097784 |
申请日期 |
2011.04.26 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
CHOKAI SATOSHI |
分类号 |
H01L21/205;C23C16/515;H01L21/336;H01L29/786;H01L31/04 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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