METHOD FOR MANUFACTURING SEED CRYSTAL OF GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR MANUFACTURING SUBSTRATE, AND SEED CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a seed crystal of a group III nitride semiconductor which can obtain a good crystalline group III nitride semiconductor single crystal when expansion growth is carried out, and to provide a method for manufacturing the group III nitride semiconductor single crystal.

SOLUTION: The method for manufacturing a seed crystal of a group III nitride semiconductor comprises as follows. By a vapor phase growth method, two or more nucleuses of a group III nitride semiconductor are made to be estranged to be formed on a member 1 for seed crystal forming, the two or more nucleuses are grown up, and two or more seed crystals 2 are obtained from the two or more nucleuses.

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