| 摘要 |
<p>The invention relates to a dose measurement device for plasma-immersion ion implantation, said device comprising a module for estimating the implantation current (CUR), a secondary electron detector (DSE) and a control circuit (CC) for estimating the ion current by differentiation of the implantation current and the current resulting from the secondary electron detector. In addition, the detector for energetic secondary electrons (DSE) comprises a collector bearing only three electrodes insulated from one another, namely: a first repelling electrode for repelling the charges to be rejected having a pre-determined sign, said electrode being provided with at least one opening for the passage of electrons; a second repelling electrode for repelling the charges to be rejected having the opposite sign, said electrode also being provided with at least one opening for the passage of electrons; and a selection electrode, said electrode also being provided with at least one opening for the passage of electrons.</p> |
