| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly efficient semiconductor light-emitting device. <P>SOLUTION: The semiconductor light-emitting device according to the embodiment comprises a semiconductor layer, a first electrode, a second electrode, a first insulator layer, a first wiring layer, a second wiring layer, a first metal pillar, a second metal pillar, and a second insulator layer. The first electrode is provided on a second main surface of the semiconductor layer. The second electrode is provided on a side surface of a part between a light-emitting layer and a first main surface in the semiconductor layer. The first wiring layer is provided on the first insulator layer and in a first opening opposite to the second main surface, and connected to the first electrode. The second wiring layer is provided on the first insulator layer and in a second opening opposite to the second main surface, and connected to the second electrode provided on the side surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
