| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element which can increase optical output from the chip surface while minimizing increase in forward voltage. <P>SOLUTION: The light-emitting element comprises: a light-emitting layer; a first conductivity type layer provided on the light-emitting layer; a first electrode provided on the first conductivity type layer; a second conductivity type layer provided under the light-emitting layer and having a thickness of t1(μm); a current block layer provided in contact with a partial region of the surface of the second conductivity type layer on the side opposite to the light-emitting layer while projecting the outer edge by a length of x1(μm) from the outer edge of the first electrode; and a second electrode which comes into contact with the surface of the current block layer on the side opposite to the second conductivity type layer and a region of the surface of the second conductivity type layer not coming into contact with the current block layer and capable of reflecting light emitted from the light-emitting layer. Assuming the sum of thicknesses of the first conductivity type layer, the light-emitting layer and the second conductivity type layer is t2(μm), following formula is satisfied. <P>COPYRIGHT: (C)2012,JPO&INPIT |
