| 摘要 |
<P>PROBLEM TO BE SOLVED: To highly accurately detect a defect. <P>SOLUTION: The amount of first secondary electrons discharged from a semiconductor substrate at a first elevation angle and the amount of second secondary electrons discharged at a second elevation angle different from the first elevation angle are individually detected. Then, from the detected amounts of the first and second secondary electrons, potential contrast images are prepared respectively. Then, the composition ratio of the prepared respective potential contrast images is determined, and the potential contrast images respectively prepared from the amounts of the first and second secondary electrons are composited at the determined composition ratio. Then, by comparing the composited potential contrast image with a reference image, the defect is extracted. When determining the composition ratio, the luminance of a bottom part between wiring is obtained, and whether or not the obtained luminance exceeds a predetermined reference value is determined. When the obtained luminance does not exceed the predetermined reference value, the composition ratio is changed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
