发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF |
摘要 |
A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×1021 cm−3, and the semiconductor device has a channel direction in a range of ±10° relative to the direction orthogonal to the <−2110> direction in the sidewall of the trench. A method of manufacturing the silicon carbide semiconductor device is also provided.
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申请公布号 |
US2011297963(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201013130986 |
申请日期 |
2010.01.27 |
申请人 |
HONAGA MISAKO;HARADA SHIN;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HONAGA MISAKO;HARADA SHIN |
分类号 |
H01L29/12;H01L21/3105;H01L29/78 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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