| 摘要 |
<p>Disclosed are: a photoelectric conversion element which has high photoelectric conversion efficiency (high sensitivity), a low dark current, and photo-selectivity to high-level B light for the purpose of achieving a low color mixing ratio (i.e., an absorption maximum wavelength in a thin film absorption spectrum of a photoelectric conversion layer of 400 to 520 nm); an imaging element; and a method for driving a photoelectric conversion element. The photoelectric conversion element comprises a first electrode, an electron blocking layer, a photoelectric conversion layer containing a merocyanine dye, a hole blocking layer, and a transparent electrode which serves as a second electrode in this order, and is characterized in that the absorption maximum wavelength in a thin film absorption spectrum of the photoelectric conversion layer containing the merocyanine dye falls within the range from 400 to 520 nm.</p> |
