| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compact switching element which is formed on a semiconductor substrate in order to switch a high frequency signal path and achieves low distortion characteristics. <P>SOLUTION: An FET 100, i.e. one example of switching elements, comprises two interdigital source-drain electrodes 101 formed on a semiconductor substrate 109, at least two gate electrodes 102 arranged to crawl between two source-drain electrodes 101, and a conductive layer 103 arranged along the adjoining gate electrodes 102 while being sandwiched therebetween. A layer located directly under a linear part 108, i.e. a part of the gate electrode 102 parallel with a finger-like part of the two source-drain electrodes 101, is electrically separated from a layer located directly under a bent part 107, i.e. a part of the gate electrode 102 connecting a pair of adjoining linear parts 108. <P>COPYRIGHT: (C)2012,JPO&INPIT |
