METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device without needing to form a mask pattern covering only a part of a trench, by using a photoresist film.

SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a first trench 7 in a semiconductor substrate 1; forming a first insulator film 8 in the first trench 7; filling the first trench 7 with a first conductive film 9 so that a top surface of the first conductive film 9 is below a top edge of the first insulator film; forming a carbon film 10 on a side surface of the first trench 7; filling the first trench 7 with a second insulator film 11; removing the carbon film 10 that covers one side surface of the first trench 7 to expose a part of the first insulator film 8; and removing the second insulator film 11 and the exposed first insulator film 8 to expose a part of the semiconductor substrate 1.

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