发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased. |
申请公布号 |
US2011298027(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113115239 |
申请日期 |
2011.05.25 |
申请人 |
ISOBE ATSUO;IEDA YOSHINORI;KATO KIYOSHI;YAKUBO YUTO;HATA YUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISOBE ATSUO;IEDA YOSHINORI;KATO KIYOSHI;YAKUBO YUTO;HATA YUKI |
分类号 |
H01L27/108;H01L21/336;H01L27/088 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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