| 摘要 |
A solid-state image pickup device and method for manufacturing the same. The solid-state image pickup device includes a substrate, a first charge accumulation region formed within the substrate, a first impurity region formed within the substrate and located above the charge accumulation region, and a gate electrode disposed on a surface of the substrate which is closer to the first impurity region. Further, a portion of the first impurity region and the charge accumulation region extend underneath a portion of the gate electrode, and edges of the charge accumulation region and first impurity region which lie underneath the gate electrode are in registry with each other. |
