| 摘要 |
<p>Disclosed is a photoelectric converter element, the current/voltage characteristics whereof are reliably positive-negative asymmetric, demonstrating clean diode characteristics, and which is further capable of increased electricity generation. A conductive layer (20) is stacked upon a semiconductor layer (11) of a photoelectric converter element (1), and a metallic nano-structure (30), including a plurality of periodic structures (33) having a random period, is layered thereupon. A pair of electrodes (41, 42) are disposed upon the conductive layer (20), mutually spaced apart. A polarity fixing layer (50) is interposed between the first electrode (41) of the pair of electrodes (41, 42) and the conductive layer (20). It is preferable for the polarity fixing layer (50) to be configured of an insulator less than 1nm in thickness.</p> |
