| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide stable electrical characteristics to a semiconductor device using an oxide semiconductor to make the semiconductor device highly reliable. <P>SOLUTION: An island-shaped oxide semiconductor layer is formed using a resist mask, the resist mask is removed, oxygen is implanted (added) to the oxide semiconductor layer, and heat treatment is performed. Removal of the resist mask, implantation of oxygen, and heat treatment are consecutively performed without exposing to the air. Impurities such as hydrogen, moisture, hydroxyl, and hydride are intentionally removed from the oxide semiconductor layer by the oxygen implantation and the heating step. Before forming the oxide semiconductor layer, chlorine may be implanted to an insulating layer where the oxide semiconductor layer is formed. Hydrogen in the insulating layer is immobilized to prevent diffusion of hydrogen from the insulating layer to the oxide semiconductor layer by the chlorine implantation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
