| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laser processing method, capable of forming an oxide film which is uniform in material or thickness and weak in adhesive force to a silicon base material prior to processing while dispensing with preprocessing or the like. <P>SOLUTION: The method for processing silicon S by irradiation of laser beam includes: a film forming step of irradiating a processing area and its periphery with a first laser beam L1 which is set to an energy density near a threshold causing ablation reaction in the silicon S, the energy density being capable of forming the oxide film S1 by a fibrous silicon oxide on the surface of the silicon S in an oxygen-containing atmosphere, to thereby form the oxide film S1 on the surface of these areas; a processing step of irradiating the processing area with a second laser beam L2 from above the oxide film S1 at an energy density capable of processing the silicon S by the ablation reaction to remove the oxide film S1 on the surface of the processing area and process the processing area; and a film removing step of removing the oxide film S1 left after the processing step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
