| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor which can realize high performance and fabrication facilitation. <P>SOLUTION: After a gate electrode 2 is formed on a supporting base 1, a gate insulating layer 3 is formed over the gate electrode 2. Next, after an organic semiconductor layer is formed over the gate insulating layer 3, an organic semiconductor pattern 4 is formed by patterning the organic semiconductor layer by laser ablation method. Lastly, a source electrode 5 and a drain electrode 6 are formed on the organic semiconductor pattern 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
