发明名称 |
NON-VOLATILE MEMORIES, CARDS, AND SYSTEMS INCLUDING SHALLOW TRENCH ISOLATION STRUCTURES WITH BURIED BIT LINES |
摘要 |
A non-volatile memory device can include a buried bit line in a substrate of a non-volatile memory device and a self-aligned shallow trench isolation region in the substrate that is self-aligned to the buried bit line. |
申请公布号 |
US2011302363(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113214571 |
申请日期 |
2011.08.22 |
申请人 |
KWON WOOK HYUN |
发明人 |
KWON WOOK HYUN |
分类号 |
G06F12/00;H01L29/78;H01L29/788 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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