发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
申请公布号 US2011300722(A1) 申请公布日期 2011.12.08
申请号 US201113156025 申请日期 2011.06.08
申请人 SAKAI MASANORI;SHIMA NOBUHITO;OKUDA KAZUYUKI 发明人 SAKAI MASANORI;SHIMA NOBUHITO;OKUDA KAZUYUKI
分类号 H01L21/318;C23C16/44 主分类号 H01L21/318
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