| 发明名称 |
MEMORY DEVICE HAVING IMPROVED PROGRAMMING OPERATION |
| 摘要 |
Some embodiments include methods and devices having a module and memory cells. The module is configured to reduce the amount of electrons in the sources and drains of the memory cells during a programming operation. |
| 申请公布号 |
KR20110132588(A) |
申请公布日期 |
2011.12.08 |
| 申请号 |
KR20117023617 |
申请日期 |
2010.03.10 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DAMLE PRASHANT S.;PARAT KRISHNA;TORSI ALESSANDRO;MUSILLI CARLO;VAKATI KALPANA;GODA AKIRA |
| 分类号 |
G11C16/10;G11C16/32;G11C16/34 |
主分类号 |
G11C16/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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